Sample U.S. Patents for Sapphire, Sapphires, Saphire, Saphires
| Number | | Title |
| 5,714,793 |
|
Complementary vertical bipolar junction transistors formed in silicon-on-saphire |
| PP6,106 |
|
African violet named Little Saphire |
| 7,033,854 |
|
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate |
| 6,992,445 |
|
High intensity discharge lamp with single crystal sapphire envelope |
| 6,960,739 |
|
Scribing sapphire substrates with a solid state UV laser |
| 6,955,579 |
|
Monolithic seal for a sapphire metal halide lamp |
| 6,954,236 |
|
Silicon-on-sapphire display with wireless interconnections and method of fabricating same |
| 6,954,235 |
|
Silicon-on-sapphire display apparatus and method of fabricating same |
| 6,953,703 |
|
Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
| 6,933,810 |
|
Surface acoustic wave device with lithium tantalate on a sapphire substrate and filter using the same |
| 6,911,375 |
|
Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
| 6,901,806 |
|
Electrical capacitance sapphire diaphragm pressure sensor and a method of fabricating the same |
| 6,873,108 |
|
Monolithic seal for a sapphire metal halide lamp |
| 6,844,611 |
|
III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal |
| 6,819,693 |
|
Sapphire monocrystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
| 6,809,010 |
|
Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
| 6,759,303 |
|
Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors |
| 6,686,261 |
|
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby |
| 6,663,736 |
|
Method for making a bonded sapphire structure |
| 6,661,174 |
|
Sapphire high intensity discharge projector lamp |
| 6,652,344 |
|
High intensity discharge lamp with single crystal sapphire envelope |
| 6,642,989 |
|
Liquid crystal display device having particular constructed sapphire substrate |
| 6,630,695 |
|
InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
| 6,617,261 |
|
Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| 6,617,187 |
|
Method for fabricating an electrically addressable silicon-on-sapphire light valve |
| 6,605,544 |
|
Bonded sapphire polygon shield |
| 6,586,819 |
|
Sapphire substrate, semiconductor device, electronic component, and crystal growing method |
| 6,580,054 |
|
Scribing sapphire substrates with a solid state UV laser |
| 6,577,375 |
|
Liquid crystal display device having particular sapphire substrates |
| 6,545,300 |
|
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby |
| 6,536,950 |
|
Sapphire reinforced thermocouple protection tube |
| 6,521,950 |
|
Ultra-high resolution liquid crystal display on silicon-on-sapphire |
| 6,521,514 |
|
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| 6,495,867 |
|
InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire |
| 6,489,221 |
|
High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| 6,483,858 |
|
Injection mode-locking Ti-sapphire laser system |
| 6,483,237 |
|
High intensity discharge lamp with single crystal sapphire envelope |
| 6,475,942 |
|
Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping |
| 6,424,017 |
|
Silicon-on-sapphire transducer |
| 6,414,436 |
|
Sapphire high intensity discharge projector lamp |
| 6,412,438 |
|
Downstream sapphire elbow joint for remote plasma generator |
| 6,404,038 |
|
Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors |
| 6,379,985 |
|
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
| 6,365,936 |
|
Ultra-high resolution liquid crystal display on silicon-on-sapphire |
| 6,330,741 |
|
Method of shrink fitting crystalline sapphire |
| 6,312,968 |
|
Method for fabricating an electrically addressable silicon-on-sapphire light valve |
| 6,291,318 |
|
Growth of GaN on sapphire with MSE grown buffer layer |
| 6,274,982 |
|
Monolithic seal for sapphire CMH lamp |
| 6,265,089 |
|
Electronic devices grown on off-axis sapphire substrate |
| 6,263,219 |
|
SQUID formed on a sapphire substrate and method for manufacturing the same |
| 6,235,611 |
|
Method for making silicon-on-sapphire transducers |
| 6,232,623 |
|
Semiconductor device on a sapphire substrate |
| 6,226,538 |
|
Magnetic sensor with squid and having superconducting coils formed on sapphire substrate |
| 6,222,194 |
|
Fast neutron irradiation of sapphire |
| PP11,829 |
|
Blueberry plant named `Sapphire` |
| 6,190,933 |
|
Ultra-high resolution liquid crystal display on silicon-on-sapphire |
| 6,126,889 |
|
Process of preparing monolithic seal for sapphire CMH lamp |
| 6,123,026 |
|
System and method for increasing the durability of a sapphire window in high stress environments |
| PP11,472 |
|
Chrysanthemum plant named `Empire Sapphire` |
| 6,090,648 |
|
Method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| 6,082,374 |
|
Fluorine assisted stripping and residue removal in sapphire downstream plasma asher |
| 6,065,630 |
|
Sapphire tube pressure vessel |
| 6,064,078 |
|
Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
| 6,059,453 |
|
Temperature probe with sapphire thermowell |
| 6,057,555 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 6,038,079 |
|
Sapphire objective system |
| 6,019,003 |
|
Flow sensor turbine assembly with sapphire bearing and metallic insert |
| PP11,088 |
|
Eryngium plant named `Sapphire Blue` |
| 5,942,343 |
|
Bonded sapphire, and method of making same |
| 5,909,160 |
|
Temperature compensated sapphire resonator for ultrastable oscillator operating at temperatures near 77.degree. Kelvin |
| 5,895,957 |
|
Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| 5,883,396 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 5,877,094 |
|
Method for fabricating a silicon-on-sapphire wafer |
| 5,864,162 |
|
Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| 5,861,336 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 5,847,618 |
|
Atomic maser with cylindrical sapphire storage bulb |
| 5,757,492 |
|
Apparatus for measuring the flying height of magnetic heads using a single-crystal sapphire disc |
| 5,709,471 |
|
Method for thermally testing with a laser the edge of a sapphire window |
| 5,702,654 |
|
Method of making thermal shock resistant sapphire for IR windows and domes |
| 5,697,998 |
|
Sapphire window laser edge annealing |
| 5,663,570 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 5,661,313 |
|
Electroluminescent device in silicon on sapphire |
| 5,641,691 |
|
Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire |
| 5,627,109 |
|
Method of manufacturing a semiconductor device that uses a sapphire substrate |
| H1,637 |
|
Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) |
| 5,607,506 |
|
Growing crystalline sapphire fibers by laser heated pedestal techiques |
| 5,600,169 |
|
Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| 5,596,205 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 5,572,040 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 5,569,548 |
|
Zinc oxide piezoelectric crystal film on sapphire plane |
| 5,549,746 |
|
Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal |
| 5,532,537 |
|
Zinc oxide piezoelectric crystal film on sapphire plane |
| 5,507,175 |
|
Cycling chilled mirror dewpoint hygrometer including a sapphire optical mirror |
| 5,492,857 |
|
High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 5,451,553 |
|
Solid state thermal conversion of polycrystalline alumina to sapphire |
| 5,441,591 |
|
Silicon to sapphire bond |
| 5,434,873 |
|
Self starting femtosecond Ti Sapphire laser with intracavity multiquantum well saturable absorber |
| 5,427,051 |
|
Solid state formation of sapphire using a localized energy source |
| 5,425,278 |
|
Weigh scale with sapphire load cell |
| 5,416,043 |
|
Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| 5,402,749 |
|
Ultra-high vacuum/chemical vapor deposition of epitaxial silicon-on-sapphire |
| 5,391,903 |
|
Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits |
Sample U.S. Trademarks for Sapphire, Sapphires, Saphire, Saphires
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